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PD - 91348C
IRL530N
l l l l l l
Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated
HEXFET(R) Power MOSFET
D
VDSS = 100V RDS(on) = 0.10
G S
ID = 17A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @T C = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
17 12 60 79 0.53 16 150 9.0 7.9 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
1.9 --- 62
Units
C/W
1/09/04
IRL530N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
RDS(on)
VGS(th) gfs
IDSS
Gate Threshold Voltage Forward Transconductance
Drain-to-Source Leakage Current
IGSS Qg Qgs Qgd td(on) tr td(off) tf
LD LS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Internal Drain Inductance Internal Source Inductance
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Typ. Max. Units Conditions --- --- V V GS = 0V, ID = 250A 0.122 --- V/C Reference to 25C, ID = 1mA --- 0.100 VGS = 10V, ID = 9.0A --- 0.120 VGS = 5.0V, ID = 9.0A --- 0.150 VGS = 4.0V, ID = 8.0A --- 2.0 V VDS = VGS, ID = 250A --- --- S V DS = 25V, ID = 9.0A --- 25 VDS = 100V, VGS = 0V A --- 250 VDS = 80V, VGS = 0V, TJ = 150C --- 100 VGS = 16V nA --- -100 VGS = -16V --- 34 ID = 9.0A --- 4.8 nC VDS = 80V --- 20 VGS = 5.0V, See Fig. 6 and 13 7.2 --- VDD = 50V 53 --- ID = 9.0A ns 30 --- RG = 6.0, VGS = 5.0V 26 --- RD = 5.5, See Fig. 10 Between lead, --- 4.5 --- nH 6mm (0.25in.) G from package --- 7.5 --- and center of die contact --- 800 --- VGS = 0V --- 160 --- pF VDS = 25V --- 90 --- = 1.0MHz, See Fig. 5
Min. 100 --- --- --- --- 1.0 7.7 --- --- --- --- --- --- --- --- --- --- ---
D
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 17 --- --- showing the A G integral reverse --- --- 60 p-n junction diode. S --- --- 1.3 V TJ = 25C, IS = 9.0A, VGS = 0V --- 140 210 ns TJ = 25C, I F = 9.0A --- 740 1100 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 3.7mH RG = 25, IAS = 9.0A. (See Figure 12) .
ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS, Pulse width 300s; duty cycle 2%
TJ 175C
IRL530N
100
TOP VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V
100
ID , Drain-to-Source Current (A )
10
ID , Drain-to-Source Current (A )
VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP
10
2.5 V
1
1
2 .5V 2 0 s P U LS E W ID TH T J = 2 5C
0.1 1 10
0.1
100
A
0.1 0.1 1
2 0 s P U LS E W ID TH T J = 1 75 C
10
100
A
V D S , D rain-to-S ource V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
T J = 2 5 C
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e (N o rm alize d)
I D = 15 A
I D , D ra in -to-S ourc e C urrent (A)
2.5
T J = 1 7 5C
10
2.0
1.5
1
1.0
0.5
0.1 2 3 4 5 6
V DS = 5 0V 2 0 s P U L S E W ID TH
7 8 9 10
A
0.0 -60 -40 -20 0 20 40 60 80
V G S = 1 0V
100 120 140 160 180
A
V G S , G ate-to -So urce Voltag e (V)
T J , J unc tion T em perature (C )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRL530N
1400
1200
C , Capacitance (pF)
1000
C iss
V G S , G ate-to-S ource V oltage (V )
V GS C iss C rs s C o ss
= = = =
0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d
15
I D = 9.0 A V D S = 8 0V V D S = 5 0V V D S = 2 0V
12
800
9
600
C oss
400
6
C rss
200
3
0 1 10 100
A
0 0 10 20
FO R TE S T C IR C U IT S E E FIG U R E 1 3
30 40 50
A
V D S , D rain-to-S ourc e V oltage (V )
Q G , T otal G ate C harge (nC )
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
I S D , R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A LIM ITE D B Y R D S (o n )
T J = 17 5C
I D , Drain C urrent (A )
100
10
10 s
T J = 2 5C
10
10 0s
1 0.4 0.6 0.8 1.0
V G S = 0V
1.2
A
1 1
T C = 25 C T J = 17 5C S ing le P u lse
10
1m s 10m s 100
1.4
1000
A
V S D , S ourc e-to-D rain V oltage (V )
V D S , D rain-to-S ource V oltage (V )
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRL530N
20
VDS VGS
RD
I D , Drain Current (A)
15
D.U.T.
+
RG
-VDD
5.0V
10
Pulse Width 1 s Duty Factor 0.1 %
5
Fig 10a. Switching Time Test Circuit
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRL530N
VDS D.U.T. RG + V - DD
5.0 V
E A S , S ingle P ulse A valanche E nergy (m J)
L
350
TO P
300
B O TTO M
250
ID 3 .7A 6 .4A 9.0 A
IAS tp
0.01
200
150
Fig 12a. Unclamped Inductive Test Circuit
100
50
V(BR)DSS tp VDD VDS
0
V D D = 25 V
25 50 75 100 125 150
A
175
S tarting T J , J unc tion T em perature (C )
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
5.0 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL530N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRL530N
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
HEXFET GATE 1-
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS IGBTs, CoPACK 1- GATE 2- COLLECTOR 3- EMITTER 4- COLLECTOR
14.09 (.555) 13.47 (.530)
2 1- GATE- DRAIN 32- DRAINSOURCE 3- SOURCE 4 - DRAIN 4- DRAIN 4.06 (.160) 3.55 (.140)
3X 1.40 (.055) 3X 1.15 (.045) 2.54 (.100)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.92 (.115) 2.64 (.104)
2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA A GPUA8P9@A &'( 6TT@H7G@9APIAXXA (A ((& DIAUC@A6TT@H7GAGDI@AA8A
Note: "P" in assembly line position indicates "Lead-Free"
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
Q6SUAIVH7@S 96U@A8P9@ @6SA&A2A ((& X@@FA ( GDI@A8
For GB Production
EX M A PLE: THIS IS A NIRF1010 LOT C DE 1789 O A SSEM BLEDO W19, 1997 NW INTHE A SSEM BLYLINE "C " INTERNA TIONA L REC TIFIER LO O G A SSEM BLY LO C DE TO PA NUM RT BER
DA C DE TE O Y R 7 = 1997 EA W EEK19 LINE C
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/04

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